Patent · US Active

Sintered solder for fine pitch first-level interconnect (FLI) applications

US10224299B2 · kind B2 · utility

1Cited by
0References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 29, 2016
Grant dateMar 5, 2019
Priority date
Expiry dateDec 29, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3841
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Foundation layers and methods of forming a foundation layer are described. Die pads are formed over a die. A dielectric layer is formed over die pads and the die. The dielectric layer is then recessed to expose top portions of the die pads. A first plurality of sintered conductive vias are formed over the die pads. The first sintered conductive vias are coupled to at least one of the die pads. In addition, a photoresist layer may be formed over the dielectric layer and the top portions of the die pads. Via openings are formed in the photoresist layer. A second plurality of sintered conductive vias may then be formed over the first sintered conductive vias to form a plurality of sintered conductive lines. Each of the first and second sintered conductive vias are formed with a liquid phase sintering (LPS) solder paste.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.