Patent · US Active

Superjunction semiconductor device having a superstructure

US10224394B2 · kind B2 · utility

0Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 2, 2018
Grant dateMar 5, 2019
Priority date
Expiry dateFeb 2, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D12/461
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

According to an embodiment of a semiconductor substrate, the semiconductor substrate includes a superjunction structure in a device region of a semiconductor layer and an alignment mark in a kerf region of the semiconductor layer. The superjunction structure includes first regions and second regions of opposite conductivity types, the first and the second regions alternating along at least one horizontal direction. The alignment mark includes a vertical step formed by an alignment structure projecting or recessed from a main surface of the semiconductor layer. The alignment structure is of a material of the first regions of the superjunction structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.