Daniel Tutuc
20Patents
2h-index
14Co-inventors
46Inventor score
Filing activity: Jun 10, 2015 → Oct 28, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10109489B2 | Method for producing a superjunction device | Electricity | 2 | Active |
| US9704984B2 | Super-junction semiconductor device comprising junction termination extension structure and method of manufacturing | Electricity | 2 | Active |
| US9905639B2 | Method of manufacturing superjunction semiconductor devices with a superstructure in alignment with a foundation | Electricity | 1 | Active |
| US10553681B2 | Forming a superjunction transistor device | Electricity | 1 | Active |
| US10950487B2 | Method for forming an alignment mark | Electricity | 1 | Active |
| US10679855B2 | Method for producing a superjunction device | Electricity | 1 | Active |
| US11929395B2 | Superjunction transistor device | Electricity | 0 | Active |
| US11342187B2 | Method for producing a superjunction device | Electricity | 0 | Active |
| US11652138B2 | Method for producing a superjunction device | Electricity | 0 | Active |
| US11894445B2 | Method for producing a superjunction device | Electricity | 0 | Active |
| US9704954B2 | Semiconductor device and a method for forming a semiconductor device | Electricity | 0 | Active |
| US11348838B2 | Method for forming a superjunction transistor device | Electricity | 0 | Active |
| US10157982B2 | Charge compensation semiconductor devices | Electricity | 0 | Active |
| US10651271B2 | Charge compensation semiconductor devices | Electricity | 0 | Active |
| US10580656B2 | Method of reducing trench depth variation from reactive ion etching process | Electricity | 0 | Active |
| US11189690B2 | Method for forming a superjunction transistor device | Electricity | 0 | Active |
| US12034040B2 | Superjunction transistor device and method for forming a superjunction transistor device | Electricity | 0 | Active |
| US9887261B2 | Charge compensation device and manufacturing therefor | Electricity | 0 | Active |
| US10224394B2 | Superjunction semiconductor device having a superstructure | Electricity | 0 | Active |
| US9484399B2 | Charge compensation device and manufacturing therefor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.