Semiconductor device
US10224400B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 9, 2018 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | Mar 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes a first electrode, a second electrode, a semiconductor element, an insulating layer and a third electrode. The semiconductor element is electrically connected to the first electrode and the second electrode. The third electrode is insulated from the semiconductor structure, the first electrode and the second electrode through the insulating layer. The semiconductor element includes a semiconductor structure, a carbon nanotube and a conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method or a coating method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.