Microwave write-assist in series-interconnected orthogonal STT-MRAM devices
US10229724B1 · kind B1 · utility
17Cited by
139References
41Claims
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Key dates
| Filing date | Dec 30, 2017 |
| Grant date | Mar 12, 2019 |
| Priority date | — |
| Expiry date | Dec 30, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes a plurality of orthogonal spin transfer magnetic tunnel junction (OST-MTJ) stacks connected in series, with each OST-MTJ stack capable of selective activation by application of an external magnetic field, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.