Patent assignee · US · COMPANY

SPIN MEMORY, INC.

146Patents
146Active
146Granted
57Portfolio score

Filing activity: Apr 6, 2016 → Nov 21, 2019

Most-cited patents

PatentTitleAreaCited byStatus
US10236047B1 Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM Electricity 27 Active
US10270027B1 Self-generating AC current assist in orthogonal STT-MRAM Electricity 21 Active
US10236048B1 AC current write-assist in orthogonal STT-MRAM Electricity 20 Active
US10229724B1 Microwave write-assist in series-interconnected orthogonal STT-MRAM devices Physics 17 Active
US10236439B1 Switching and stability control for perpendicular magnetic tunnel junction device Electricity 15 Active
US10360961B1 AC current pre-charge write-assist in orthogonal STT-MRAM Electricity 12 Active
US10326073B1 Spin hall effect (SHE) assisted three-dimensional spin transfer torque magnetic random access memory (STT-MRAM) Electricity 11 Active
US10347308B1 Systems and methods utilizing parallel configurations of magnetic memory devices Electricity 10 Active
US10255962B1 Microwave write-assist in orthogonal STT-MRAM Electricity 9 Active
US10468588B2 Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer Electricity 8 Active
US10600465B1 Spin-orbit torque (SOT) magnetic memory with voltage or current assisted switching Electricity 7 Active
US10468590B2 High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory Electricity 7 Active
US10460781B2 Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank Physics 6 Active
US10580827B1 Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching Electricity 6 Active
US10403343B2 Systems and methods utilizing serial configurations of magnetic memory devices Electricity 6 Active
US10339993B1 Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching Electricity 6 Active
US10658021B1 Scalable spin-orbit torque (SOT) magnetic memory Electricity 6 Active
US10355045B1 Three dimensional perpendicular magnetic junction with thin-film transistor Electricity 5 Active
US10916696B2 Method for manufacturing magnetic memory element with post pillar formation annealing Electricity 5 Active
US10886330B2 Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitch Electricity 5 Active
US10347314B2 Method and apparatus for bipolar memory write-verify Physics 5 Active
US10333063B1 Fabrication of a perpendicular magnetic tunnel junction (PMTJ) using block copolymers Electricity 4 Active
US10658425B2 Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels Electricity 4 Active
US10937479B1 Integration of epitaxially grown channel selector with MRAM device Physics 4 Active
US10236075B1 Predicting tunnel barrier endurance using redundant memory structures Physics 4 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.