Plasma etching apparatus and method
US10229815B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2014 |
| Grant date | Mar 12, 2019 |
| Priority date | — |
| Expiry date | Jan 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30655
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etching apparatus includes a first RF power supply unit configured to apply a first RF power for plasma generation to a first electrode or a second electrode disposed opposite to each other in a process container configured to be vacuum-exhausted, a second RF power supply unit configured to apply a second RF power for ion attraction to the second electrode, and a controller configured to control the second RF power supply unit. The second RF power supply unit includes a second RF power supply and a second matching unit. The controller is preset to control the second RF power supply unit to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power and a second power, while controlling the second matching unit to switch a matching operation in synchronism with the power modulation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.