Plasma processing apparatus and probe apparatus
US10229819B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2013 |
| Grant date | Mar 12, 2019 |
| Priority date | — |
| Expiry date | Feb 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H2242/26
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a high frequency power supply turning a high frequency power ON/OFF and supplying the high frequency power to either one of upper and lower electrodes. A matching circuit and a power transmission line are provided between the high frequency power supply and the either one of the electrodes. A probe detector measures electrical characteristics on the power transmission line and generates measurement signals. A processing unit samples the measurement signals, generates sample values, The processing unit receives a pulse signal corresponding to ON/OFF switching of the high frequency power, generates sample values by sampling the measurement signals at a sampling interval for a period after the lapse of a mask period from an ascending timing thereof until a descending timing thereof, and selects sample values obtained through the last one or more sampling with respect to the descending timing, as detection values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.