Ion implanter comprising integrated ventilation system
US10229840B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2015 |
| Grant date | Mar 12, 2019 |
| Priority date | — |
| Expiry date | Oct 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ion implantation system is described, including: an ion implanter comprising a housing defining an enclosed volume in which is positioned a gas box configured to hold one or more gas supply vessels, the gas box being in restricted gas flow communication with gas in the enclosed volume that is outside the gas box; a first ventilation assembly configured to flow ventilation gas through the housing and to exhaust the ventilation gas from the housing to an ambient environment of the ion implanter; a second ventilation assembly configured to exhaust gas from the gas box to a treatment apparatus that is adapted to at least partially remove contaminants from the gas box exhaust gas, or that is adapted to dilute the gas box exhaust gas, to produce a treated effluent gas, the second ventilation assembly comprising a variable flow control device for modulating flow rate of the gas box exhaust gas between a relatively lower gas box exhaust gas flow rate and a relatively higher gas box exhaust gas flow rate, and a motive fluid driver adapted to flow the gas box exhaust gas through the variable flow control device to the treatment apparatus; and a monitoring and control assembly configured t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.