Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM
US10236047B1 · kind B1 · utility
27Cited by
149References
34Claims
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Key dates
| Filing date | Dec 29, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Dec 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has plurality of magnetic tunnel junction (MTJ) stack having significantly improved performance of the free layers in the MTJ structures. The MRAM device utilizes a spin torque nano-oscillator (STNO), a metallic bit line and a plurality of orthogonal spin transfer magnetic tunnel junctions (OST-MTJs), each OST-MTJ comprising an in-plane polarizer, and a perpendicular MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.