State-dependent read voltage threshold adaptation for nonvolatile memory
US10236067B2 · kind B2 · utility
14Cited by
12References
19Claims
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Key dates
| Filing date | Aug 2, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Aug 2, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A controller adapts the read voltage thresholds of a memory unit in a non-volatile memory. In one embodiment, the controller determines, based on statistics for a memory unit of the non-volatile memory, an operating state of the memory unit from among a plurality of possible operating states and adapts at least one read voltage threshold for a memory cell in the memory unit based on the determined operating state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.