Interconnects with hybrid metallization
US10236206B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 3, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Jul 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures for interconnects and methods for forming interconnects. A dual-damascene opening is formed in a dielectric layer and a first liner is formed on the dielectric layer at one or more sidewalls of the dual-damascene opening. A first conductor layer is formed in a portion of the dual-damascene opening. The first liner is removed from the one or more sidewalls of the dual-damascene opening vertically between the first conductor layer and a top surface of the dielectric layer. After the first liner is removed, a second liner is formed on the dielectric layer at the one or more sidewalls of the dual-damascene opening between the first conductor layer and the top surface of the dielectric layer. A second conductor layer is formed in the dual-damascene opening between the first conductor layer and the top surface of the dielectric layer. The first and second liner materials differ in composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.