Direct bonding method
US10236210B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2016 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | May 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F10/163
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method is carried out of a first substrate having a first layer made of a first material with a second substrate having a second layer made of a second material, the first material and the second material being of different natures and selected from alloys of elements of columns III and V, the method having the steps of: a) providing the first substrate and the second substrate, b) bringing the first substrate into contact with the second substrate so as to form a bonding interface between the first layer and the second layer, c) performing a first heat treatment at a first predefined temperature, d) thinning one of the substrates, e) depositing, at a temperature less than or equal to the first predefined temperature, a barrier layer, on the thinned substrate, and f) performing a second heat treatment at a second predefined temperature, greater than the first predefined temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.