Photodetector and imaging device
US10236319B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Aug 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A photodetector includes a lower contact layer, a first absorber layer that is formed over the lower contact layer and that is photosensitive to light of a first wavelength, an middle contact layer formed over the first absorber layer, a second absorber layer that is formed over the middle contact layer and that is photosensitive to light of a second wavelength, and an upper contact layer formed over the second absorber layer, wherein a barrier layer is formed between the lower contact layer and the first absorber layer, between the first absorber layer and the middle contact layer, between the middle contact layer and the second absorber layer, or between the second absorber layer and the upper contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.