Semiconductor device and method of forming substrate including embedded component with symmetrical structure
US10236337B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Oct 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a first conductive layer. A second conductive layer is formed over the first conductive layer. A semiconductor component is disposed over the first conductive layer. The second conductive layer lies in a plane between a top surface of the semiconductor component and a bottom surface of the semiconductor component. A third conductive layer is formed over the semiconductor component opposite the first conductive layer. The semiconductor device includes a symmetrical structure. A first insulating layer is formed between the first conductive layer and semiconductor component. A second insulating layer is formed between the semiconductor component and third conductive layer. A height of the first insulating layer between the first conductive layer and semiconductor component is between 90% and 110% of a height of the second insulating layer between the semiconductor component and third conductive layer. The semiconductor component includes a passive device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.