SiC single crystal seed, SiC ingot, SiC single crystal seed production method, and SiC single crystal ingot production method
US10236338B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Apr 20, 2016 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Apr 20, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A SiC single crystal seed of the present invention has a main surface with an offset angle of at least 2° but not more than 20° relative to the {0001} plane, and at least one sub-growth surface, wherein the sub-growth surface includes an initial facet formation surface that is on the offset upstream side of the main surface and has an inclination angle θ relative to the {0001} plane with an absolute value of less than 2° in any direction, and the initial facet formation surface has a screw dislocation starting point.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.