Switching and stability control for perpendicular magnetic tunnel junction device
US10236439B1 · kind B1 · utility
15Cited by
149References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 30, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Dec 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. The precessional spin current magnetic layer has a diameter that is different from a diameter of the free layer. The device is designed to provide control over the injection of stray fields and the electronic coupling between the precessional spin current magnetic layer and the free layer. Switching speed, switching current, and thermal barrier height for the device can be adjusted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.