Thermal acid generators and photoresist pattern trimming compositions and methods
US10241407B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2016 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | Oct 19, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07C2603/74
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Provided are ionic thermal acid generators of the following general formula (I): wherein: Ar1 represents an optionally substituted carbocyclic or heterocyclic aromatic group; W independently represents a group chosen from carboxyl, hydroxy, nitro, cyano, C1-5 alkoxy and formyl; X is a cation; Y independently represents a linking group; Z independently represents a group chosen from hydroxyl, fluorinated alcohols, esters, optionally substituted alkyl, C5 or higher optionally substituted monocyclic, polycyclic, fused polycyclic cycloaliphatic, or aryl, which may optionally comprise a heteroatom, provided at least one occurrence of Z is a hydroxyl group; a is an integer of 0 or greater; b is an integer of 1 or greater; provided that a+b is at least 1 and not greater than the total number of available aromatic carbon atoms of the aromatic group. Also provided are photoresist pattern trimming compositions and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.