Method for producing patterns

US10242870B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Nicolas Posseme · Grenoble, FR
• Stefan Landis · Tullins, FR
• Lamia Nouri · Le Bicêtre, FR

Key dates

• Filing date: May 26, 2017
• Grant date: Mar 26, 2019
• Expiry date: May 26, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3083
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing patterns in a layer to be etched, from a stack including at least the layer to be etched and a masking layer overlying the layer to be etched, with the masking layer having at least one pattern. The method includes modifying a first area of the layer to be etched by ion implantation through the masking layer; depositing a buffer layer to cover the pattern of the masking layer; modifying another area of the layer to be etched, different from the first area, by ion implantation through the buffer layer, to a depth of the layer to be etched greater than the implantation depth of the preceding step of modifying; removing the buffer layer; removing the masking layer; removing the modified areas by etching them selectively to the non-modified areas of the layer to be etched.