Rework of patterned dielectric and metal hardmask films

US10242872B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• John C. Arnold · North Chatham, US
• Prasad Bhosale · Slingerlands, US
• Donald F. Canaperi · Bridgewater, US
• Raghuveer R. Patlolla · Guilderland, US
• Cornelius Brown Peethala · Slingerlands, US
• Hosadurga Shobha · Armonk, US
• Theodorus E. Standaert · Clifton Park, US

Key dates

• Filing date: Mar 21, 2017
• Grant date: Mar 26, 2019
• Expiry date: May 31, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L22/20
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for reworking a semiconductor device includes, in a pattern stack formed on an interlevel dielectric (ILD) layer, polishing the pattern stack to remove a top hardmask layer of the pattern stack. Each hardmask layer of the pattern stack is selectively wet etched to remaining layers of the pattern stack and the ILD layer. A reworked pattern stack is reformed on the ILD layer.