Inventor · Slingerlands, NY, US

Prasad Bhosale

16Patents
2h-index
38Co-inventors
46Inventor score

Filing activity: Mar 10, 2017 → Dec 6, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US10096769B2 Bottom electrode for MRAM applications Electricity 6 Active
US10303829B2 Automated method for integrated analysis of back end of the line yield, line resistance/capacitance and process performance Electricity 2 Active
US10461248B2 Bottom electrode for MRAM applications Electricity 2 Active
US11476418B2 Phase change memory cell with a projection liner Emerging Cross-Sectional Technologies 1 Active
US11223655B2 Semiconductor tool matching and manufacturing management in a blockchain Electricity 1 Active
US10978388B2 Skip via for metal interconnects Electricity 1 Active
US12387937B2 Sam formulations and cleaning to promote quick depositions Electricity 0 Active
US10978342B2 Interconnect with self-forming wrap-all-around barrier layer Electricity 0 Active
US10242872B2 Rework of patterned dielectric and metal hardmask films Electricity 0 Active
US11074387B2 Automated method for integrated analysis of back end of the line yield, line resistance/capacitance and process performance Electricity 0 Active
US10658235B2 Rework for metal interconnects using etch and thermal anneal Electricity 0 Active
US10585998B2 Automated method for integrated analysis of back end of the line yield, line resistance/capacitance and process performance Electricity 0 Active
US11444029B2 Back-end-of-line interconnect structures with varying aspect ratios Electricity 0 Active
US12336294B2 Gate-cut and separation techniques for enabling independent gate control of stacked transistors Electricity 0 Active
US11800817B2 Phase change memory cell galvanic corrosion prevention Electricity 0 Active
US11901224B2 Rework for metal interconnects using etch and thermal anneal Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.