Method of wet etching and method of fabricating semiconductor device using the same
US10242880B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2017 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | Jul 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a method of wet etching and a method of fabricating a semiconductor device. The wet etching method includes providing a wafer in a process bath and an etchant is accommodated, supplying the process bath with a primary etchant to control a concentration of a specific material in the etchant, supplying the process bath with a first additive to increase the concentration of the specific material in the etchant, and supplying the process bath with a second additive to suppress a defect caused by an increase in the concentration of the specific material in the etchant. The etchant includes at least one, of the primary etchant, the first additive, and the second additive. The first additive and the second additive are separately supplied to the process bath.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.