Method of manufacturing switching element
US10243035B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2017 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | Nov 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/046
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a switching element is provided. The method including: preparing a semiconductor substrate which includes an n-type drain region, a p-type body region, and a trench penetrating the body region and reaching the drain region; and forming a lateral surface p-type region extending along a lateral surface of the trench below the body region by heating the semiconductor substrate so as to make a part of the body region flow into the trench. The switching element includes: a gate insulating layer covering an inner surface of the trench; a bottom p-type region in contact with the gate insulating layer at a bottom surface of the trench and connected to the lateral surface p-type region; an n-type source region; and a gate electrode provided in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.