Semiconductor structure and manufacturing method thereof and terminal area structure of semiconductor device

US10243036B2 · kind B2 · utility

Assignee

• UBIQ Semiconductor Corp. · TW

Inventors

• Yi-Yun Tsai · Hengshan, TW
• Chih-Hung Chen
• Chin-Fu Chen · Taichung, TW

Key dates

• Filing date: Jan 12, 2018
• Grant date: Mar 26, 2019
• Expiry date: Jan 12, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513

Abstract

A semiconductor structure including a substrate, a first dielectric layer, a first conductive layer, a positioning part, two spacers, and a second conductive layer is provided. The substrate has a first trench. The first dielectric layer is disposed on a surface of the first trench. The first conductive layer is filled in the first trench and located on the first dielectric layer. The positioning part is disposed on the substrate and has a first opening. The first opening exposes the first trench. The spacers are disposed on two sidewalls of the first opening and expose the first conductive layer. The second conductive layer is filled in the first opening and electrically connected to the first conductive layer. The semiconductor structure can prevent the generation of leakage current while maintaining a high breakdown voltage.