High dose antimony implant through screen layer for n-type buried layer integration
US10243048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2017 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | Apr 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device having an n-type buried layer (NBL) is formed by forming a thin screen layer on the top surface of the substrate. Antimony is implanted through the screen layer exposed by an implant mask into the substrate; the implant mask blocks antimony from the substrate outside the NBL area. The implant mask is removed, leaving the screen layer, which has the same thickness over the NBL area and the area outside the NBL, on the surface. Silicon dioxide is formed during an anneal/drive process, both in the NBL area and outside the NBL area. Slightly more silicon dioxide is formed in the NBL area, consuming more silicon there and so forming a shallow silicon recess. An epitaxial layer is grown on the top surface of the substrate. A structure for the microelectronic device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.