Shariq Arshad
7Patents
2h-index
27Co-inventors
47Inventor score
Filing activity: Nov 1, 2011 → Mar 2, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8530298B2 | Radiation hardened integrated circuit | Electricity | 4 | Active |
| US10243048B2 | High dose antimony implant through screen layer for n-type buried layer integration | Electricity | 2 | Active |
| US11742208B2 | Method of reducing voids and seams in trench structures by forming semi-amorphous polysilicon | Electricity | 1 | Active |
| US11296075B2 | High reliability polysilicon components | Electricity | 1 | Active |
| US11916067B2 | High reliability polysilicon components | Electricity | 0 | Active |
| US11756794B2 | IC with deep trench polysilicon oxidation | Electricity | 0 | Active |
| US12170310B2 | Integrated circuits including composite dielectric layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.