Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film
US10248019B2 · kind B2 · utility
1Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Dec 21, 2012 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Dec 23, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/11
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A pattern forming, method, includes: (i) forming a film from an actinic ray-sensitive or radiation-sensitive resin composition that contains (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and decomposing by an action of an acid to decrease a solubility of the compound (A) for an organic solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.