Semiconductor devices with same conductive type but different threshold voltages and method of fabricating the same
US10249488B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2018 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Jan 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with three transistors of same conductive type but different threshold voltage is provided in the present invention, wherein the first transistor includes a high-k dielectric layer, a first bottom barrier metal layer, a second bottom barrier metal layer, a work function metal layer and a low resistance metal. The second transistor includes the high-k dielectric layer, the first bottom barrier metal layer, the second bottom barrier metal layer and the low resistance metal, and a third transistor on the substrate. The third transistor includes the high-k dielectric layer, the first bottom barrier metal layer and the low resistance metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.