Patent · US Active

Use of silyl bridged alkyl compounds for dense OSG films

US10249489B2 · kind B2 · utility

2Cited by

2References

25Claims

0Family size

Assignee

Versum Materials US, LLC · US

Inventors

Raymond Nicholas Vrtis · Allentown, US
Robert Gordon Ridgeway · Tempe, US
Jennifer Lynn Anne Achtyl · Tempe, US
William Robert Entley · Tempe, US
Dino Sinatore · Tempe, US
Kathleen Esther Theodorou · Tempe, US
Andrew J. Adamczyk · Scottsdale, US

Key dates

Filing date	Oct 20, 2017
Grant date	Apr 2, 2019
Priority date	—
Expiry date	Oct 20, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0262
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Low dielectric organosilicon films are deposited by a process comprising the steps of: providing a substrate within a vacuum chamber; introducing into the vacuum chamber a gaseous silicon containing precursor composition comprising at least one organosilicon precursor selected from the group consisting of Formula (I) and Formula (II):

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.