Method and structure for forming a replacement contact
US10249533B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2018 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Apr 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes forming a plurality of gate structures spaced apart from each other on a fin, forming an inorganic plug portion on the fin between at least two gate structures of the plurality of gate structures, forming a dielectric layer on the fin and between remaining gate structures of the plurality of gate structures, forming an organic planarizing layer (OPL) on the plurality of gate structures and on the inorganic plug portion, removing a portion of the OPL to expose the inorganic plug portion, selectively removing the inorganic plug portion, and forming a contact on the fin in place of the removed inorganic plug portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.