Radio-frequency isolation using cavity formed in interface layer
US10249575B2 · kind B2 · utility
6Cited by
15References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2017 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Oct 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15313
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device involves providing a transistor device, forming one or more electrical connections to the transistor device, forming one or more dielectric layers over at least a portion of the electrical connections, applying an interface material over at least a portion of the one or more dielectric layers, removing at least a portion of the interface material to form a trench, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.