Patent · US Active

Semiconductor die bond pad with insulating separator

US10249583B1 · kind B1 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Christian Bretthauer · Munich, DE
Bernhard Laumer · Ottobrunn, DE
Holger Poehle · Taufkirchen, DE
Momtchil Stavrev · Dresden, DE

Key dates

Filing date	Sep 19, 2017
Grant date	Apr 2, 2019
Priority date	—
Expiry date	Sep 19, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3656
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor die includes a last metallization layer above a semiconductor substrate, a bond pad above the last metallization layer, a passivation layer covering part of the bond pad and having an opening that defines a contact area of the bond pad, an insulating region separating the bond pad from the last metallization layer at least in an area corresponding to the contact area of the bond pad, and an electrically conductive interconnection structure that extends from the bond pad to the upper metallization layer outside the contact area of the bond pad. Corresponding methods of manufacture are also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.