Patent · US Active

Semiconductor device including self-protecting current sensor

US10249612B2 · kind B2 · utility

0Cited by

1References

10Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Stefan Decker · Munich, DE
Robert Illing · Finkenstein, AT
Michael Nelhiebel · Villach, AT

Key dates

Filing date	May 12, 2015
Grant date	Apr 2, 2019
Priority date	—
Expiry date	Jun 25, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor body includes a load current component having a load current transistor area and a sensor component including a sensor transistor area. The sensor transistor area has first and third transistor area parts differing from a second transistor area part between the first and third transistor area parts by a sensor transistor area element being absent in the second transistor area part. The second transistor area part is electrically disconnected from a parallel connection of the first and third transistor area parts by the sensor transistor area element being absent in the second transistor area part.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.