Component having a multiple quantum well structure

US10249787B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Tobias Meyer · Durham, US
• Thomas Lehnhardt · Regensburg, DE
• Matthias Peter · Orpund, CH
• Asako Hirai · Lompoc, US
• Juergen Off · Regensburg, DE
• Philipp Drechsel · Regensburg, DE
• Peter Stauss · Regensburg, DE

Key dates

• Filing date: Mar 1, 2016
• Grant date: Apr 2, 2019
• Expiry date: Mar 1, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.