Matthias Peter
51Patents
5h-index
88Co-inventors
71Inventor score
Filing activity: May 5, 2006 → May 24, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9948294B2 | Communicating across galvanic isolation, for example, in a power converter | Electricity | 10 | Active |
| US8390004B2 | Light-emitting structure | Electricity | 8 | Active |
| US8592840B2 | Optoelectronic semiconductor chip and use of an intermediate layer based on AlGaN | Electricity | 6 | Active |
| US8173991B2 | Optoelectronic semiconductor chip having a multiple quantum well structure | Electricity | 6 | Active |
| US8410507B2 | Thermal light source having a high color rendering quality | Electricity | 5 | Active |
| US10326306B2 | Communicating across galvanic isolation | Electricity | 4 | Active |
| US9502611B2 | Optoelectronic component and method for the production thereof | Electricity | 4 | Active |
| US9466759B2 | Optoelectronic device and method for producing an optoelectronic device | Electricity | 3 | Active |
| US10574302B2 | Communications using an inductive coupling | Electricity | 3 | Active |
| US9799797B2 | Light-emitting semiconductor chip | Electricity | 2 | Active |
| US9012885B2 | Light-emitting semiconductor chip | Electricity | 2 | Active |
| US9761576B2 | Optoelectronic semiconductor chip and method for fabrication thereof | Electricity | 2 | Active |
| US9029177B2 | Optoelectronic semiconductor chip and method for fabrication thereof | Electricity | 2 | Active |
| US7791081B2 | Radiation-emitting semiconductor chip | Electricity | 2 | Active |
| US9202978B2 | Radiation-emitting semiconductor chip having integrated ESD protection | Electricity | 2 | Active |
| US9780838B2 | Receiver circuit | Electricity | 2 | Active |
| US9728674B2 | Optoelectronic component and method for the production thereof | Electricity | 2 | Active |
| US8330174B2 | LED having current spreading layer | Electricity | 1 | Active |
| US8314415B2 | Radiation-emitting semiconductor body | Electricity | 1 | Active |
| US7998273B2 | Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon | Emerging Cross-Sectional Technologies | 1 | Active |
| US9530931B2 | Light-emitting semiconductor chip | Electricity | 1 | Active |
| US8585246B2 | Optoelectronic module and projection apparatus comprising the optoelectronic module | Electricity | 1 | Active |
| US8907359B2 | Optoelectronic semiconductor component | Electricity | 1 | Active |
| US9786498B2 | Method for the production of a nitride compound semiconductor layer | Electricity | 0 | Active |
| US12021350B2 | Edge-emitting semiconductor laser | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.