Bi-directional RRAM decoder-driver
US10255953B2 · kind B2 · utility
2Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2018 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Jan 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure generally relates to the fabrication of and methods for creating a reversible tri-state memory device which provides both forward and reverse write and read drive to a bi-directional RRAM cell, thus allowing writing in the forward and reverse directions. The memory device, however, utilizes a single transistor “on pitch” which fits between two metal lines traversing the array tile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.