Microwave write-assist in orthogonal STT-MRAM
US10255962B1 · kind B1 · utility
9Cited by
150References
45Claims
0Family size
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Key dates
| Filing date | Dec 30, 2017 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Dec 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes an external magnetic field generator, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.