Semiconductor device including a switching element and a sense diode
US10256232B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 10, 2018 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Jan 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device provided herein includes: a semiconductor substrate; an upper main electrode provided above the semiconductor substrate; a sense anode electrode provided above the semiconductor substrate; a resistance layer provided above the semiconductor substrate and having a resistivity higher than the sense anode electrode; a lower main electrode provided below the semiconductor substrate. The semiconductor substrate includes a switching element and a sense diode. The switching element is connected between the upper main electrode and the lower main electrode. The sense diode comprises a first anode region of a p-type connected to the sense anode electrode via the resistance layer and a first cathode region of an n-type connected to the lower main electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.