Masaru Senoo
37Patents
3h-index
26Co-inventors
59Inventor score
Filing activity: Dec 10, 2008 → Oct 25, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9520487B2 | Reverse conducting insulated gate bipolar transistor | Electricity | 8 | Active |
| US9064711B2 | Semiconductor device and method for fabricating semiconductor device | Electricity | 5 | Active |
| US9853024B2 | Semiconductor device | Electricity | 5 | Active |
| US8242535B2 | IGBT and method of producing the same | Electricity | 3 | Active |
| US9035415B2 | Vertical semiconductor device comprising a resurf structure | Electricity | 3 | Active |
| US9865728B2 | Switching device | Electricity | 3 | Active |
| US9048085B2 | Semiconductor device | Electricity | 2 | Active |
| US9178014B2 | Semiconductor device | Electricity | 2 | Active |
| US9589952B2 | Reverse conducting IGBT | Electricity | 2 | Active |
| US8476732B2 | Semiconductor device | Electricity | 2 | Active |
| US9276137B2 | Diode and semiconductor device including built-in diode | Electricity | 2 | Active |
| US9530836B2 | Semiconductor apparatus | Electricity | 2 | Active |
| US9437700B2 | Semiconductor device | Electricity | 1 | Active |
| US9082842B2 | Semiconductor device | Electricity | 1 | Active |
| US9601592B2 | IGBT and method of manufacturing the same | Electricity | 1 | Active |
| US10256232B2 | Semiconductor device including a switching element and a sense diode | Electricity | 1 | Active |
| US9691888B1 | IGBT | Electricity | 1 | Active |
| US9412809B2 | Semiconductor device and manufacturing method thereof | Electricity | 1 | Active |
| US9147758B2 | Semiconductor device | Electricity | 1 | Active |
| US9190503B2 | IGBT and method of manufacturing the same | Electricity | 1 | Active |
| US8674511B2 | Method of forming a semiconductor device with a contact pad on a sloped silicon dioxide surface | Electricity | 1 | Active |
| US8735974B2 | Semiconductor devices | Electricity | 1 | Active |
| US9437720B2 | Semiconductor device | Electricity | 0 | Active |
| US9437719B2 | Method for manufacturing semiconductor device having grooved surface | Electricity | 0 | Active |
| US9000478B2 | Vertical IGBT adjacent a RESURF region | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.