Radiation-hardened power semiconductor devices and methods of forming them

US10256325B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Stefan Gamerith · Villach, AT
• Markus Schmitt · Neubiberg, DE
• Winfried Kaindl · Unterhaching, DE
• Gerald Sölkner · Ottobrunn, DE

Key dates

• Filing date: Nov 8, 2012
• Grant date: Apr 9, 2019
• Expiry date: Apr 2, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

According to an embodiment, a method of forming a power semiconductor device is provided. The method includes providing a semiconductor substrate and forming an epitaxial layer on the semiconductor substrate. The epitaxial layer includes a body region, a source region, and a drift region. The method further includes forming a dielectric layer on the epitaxial layer. The dielectric layer is formed thicker above a drift region of the epitaxial layer than above at least part of the body region and the dielectric layer is formed at a temperature less than 950° C.