Stefan Gamerith
19Patents
3h-index
16Co-inventors
49Inventor score
Filing activity: Sep 30, 2010 → Apr 12, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9024383B2 | Semiconductor device with a super junction structure with one, two or more pairs of compensation layers | Electricity | 10 | Active |
| US9209292B2 | Charge compensation semiconductor devices | Electricity | 4 | Active |
| US9947741B2 | Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area | Electricity | 3 | Active |
| US8716788B2 | Semiconductor device with self-charging field electrodes | Electricity | 3 | Active |
| US9147763B2 | Charge-compensation semiconductor device | Electricity | 2 | Active |
| US8288230B2 | Method for producing a gate electrode structure | Electricity | 2 | Active |
| US9954056B2 | Semiconductor device with superjunction structure and transistor cells in a transition region along a transistor cell region | Electricity | 2 | Active |
| US8823084B2 | Semiconductor device with charge compensation structure arrangement for optimized on-state resistance and switching losses | Electricity | 2 | Active |
| US9570596B2 | Super junction semiconductor device having a compensation structure | Electricity | 2 | Active |
| US8866222B2 | Charge compensation semiconductor device | Electricity | 2 | Active |
| US9112053B2 | Method for producing a semiconductor device including a dielectric layer | Electricity | 2 | Active |
| US9570607B2 | Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area | Electricity | 1 | Active |
| US9773863B2 | VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor body | Electricity | 1 | Active |
| US9117694B2 | Super junction structure semiconductor device based on a compensation structure including compensation layers and a fill structure | Electricity | 0 | Active |
| US9627471B2 | Super junction semiconductor device having strip structures in a cell area | Electricity | 0 | Active |
| US9537003B2 | Semiconductor device with charge compensation | Electricity | 0 | Active |
| US11302781B2 | Semiconductor device having an electrostatic discharge protection structure | Electricity | 0 | Active |
| US10256325B2 | Radiation-hardened power semiconductor devices and methods of forming them | Electricity | 0 | Active |
| US8399325B2 | Method for producing an electrode structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.