Probe guide plate having a silicon oxide layer formed on surfaces and on an inner wall of a through hole thereof, and a protective insulating layer formed on the silicon oxide layer, and probe apparatus including the probe guide plate
US10261110B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 21, 2016 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Jun 10, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2601
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A probe guide plate includes: a silicon substrate including one surface and the other surface opposite to the one surface; a through hole formed through the silicon substrate to extend from the one surface of the silicon substrate to the other surface of the silicon substrate; a silicon oxide layer formed on the one surface of the silicon substrate, the other surface of the silicon substrate, and an inner wall surface of the through hole; and a protective insulating layer formed on the silicon oxide layer. The protective insulating layer is formed on at least one of the one surface and the other surface of the silicon substrate via the silicon oxide layer, and partially formed on the inner wall surface of the through hole via the silicon oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.