Non-volatile memory and program method thereof
US10262748B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2017 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Dec 11, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5628
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory and a program method thereof are provided. The program method of the non-volatile memory includes: setting a first incremental value, and providing a plurality of first pulses of incrementally increasing voltages in sequence according to the first incremental value for performing a programming operation on a plurality of non-volatile memory cells during a first time period; and setting a second incremental value, and providing a plurality of second pulses of incrementally increasing voltages in sequence according to the second incremental value for performing a programming operation on the non-volatile memory cells during a second time period which is after the first time period, wherein the first incremental value is smaller than the second incremental value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.