Selective oxidation of transition metal nitride layers within compound semiconductor device structures
US10262856B2 · kind B2 · utility
2Cited by
8References
22Claims
0Family size
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Key dates
| Filing date | Dec 15, 2017 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Dec 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for integrating transition metal oxide (TMO) layers into a compound semiconductor device structure via selective oxidation of transition metal nitride (TMN) layers within the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.