Daniel S. Green
11Patents
2h-index
10Co-inventors
43Inventor score
Filing activity: Jan 12, 2017 → Jun 25, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10262856B2 | Selective oxidation of transition metal nitride layers within compound semiconductor device structures | Electricity | 2 | Active |
| US9837483B2 | Nanoscale high-performance topological inductor | Electricity | 2 | Active |
| US11756848B1 | Chip integration into cavities of a host wafer using lateral dielectric material bonding | Electricity | 1 | Active |
| US11810876B1 | Heterogeneous integration of radio frequency transistor chiplets having interconnection tuning circuits | Electricity | 1 | Active |
| US12099092B1 | Built in self-test of heterogeneous integrated radio frequency chiplets | Physics | 0 | Active |
| US12322714B2 | Heterogeneous integration of radio frequency transistor chiplets having interconnection tuning circuits | Electricity | 0 | Active |
| US11733297B1 | Built in self-test of heterogeneous integrated radio frequency chiplets | Physics | 0 | Active |
| US12191295B1 | Heterogeneous integration of radio frequency transistor chiplets having interconnections to host wafer circuits for optimizing operating conditions | Electricity | 0 | Active |
| US11940495B1 | Built in self-test of heterogeneous integrated radio frequency chiplets | Physics | 0 | Active |
| US12261091B2 | Chip integration into cavities of a host wafer using lateral dielectric material bonding | Electricity | 0 | Active |
| US12125759B2 | Chip integration into cavities of a host wafer using lateral dielectric material bonding | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.