Integrated circuit and method of forming an integrated circuit

US10262889B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Torsten Helm · Rabenau, DE
• Marc Probst · Radeberg, DE
• Uwe Rudolph · Dresden, DE

Key dates

• Filing date: May 23, 2017
• Grant date: Apr 16, 2019
• Expiry date: May 23, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An integrated circuit includes a first trench disposed in a semiconductor material, wherein a width of the first trench in an upper portion of the first trench adjacent to a surface of the semiconductor material is smaller than a width of the first trench in a lower portion of the first trench, the lower portion being disposed within the semiconductor material, each width being measured in a plane parallel to a surface of the semiconductor material, each width denoting a distance between inner faces of remaining semiconductor material portions or between outer faces of a filling disposed in the first trench, or between an inner face of a remaining semiconductor material portion and an outer face of a filling disposed in the first trench.