Method for forming an electrical contact between a semiconductor film and a bulk handle wafer, and resulting structure
US10262898B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 7, 2016 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Jun 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.