Inventor · Meylan, FR

Didier Dutartre

47Patents
8h-index
50Co-inventors
78Inventor score

Filing activity: Apr 21, 1986 → Apr 26, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6177717A Low-noise vertical bipolar transistor and corresponding fabrication process Electricity 27 Expired
US4725561A Process for the production of mutually electrically insulated monocrystalline silicon islands using laser recrystallization Electricity 26 Expired
US6537894B2 Process for fabricating a substrate of the silicon-on-insulator or silicon-on-nothing type and resulting device Electricity 25 Expired
US5252181A Method for cleaning the surface of a substrate with plasma Chemistry; Metallurgy 24 Expired
US6132806A Method of implementation of MOS transistor gates with a high content Electricity 17 Expired
US7906381B2 Method for integrating silicon-on-nothing devices with standard CMOS devices Electricity 13 Active
US5994676A Method for calibrating the temperature of an epitaxy reactor Chemistry; Metallurgy 12 Expired
US6472262B2 Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistor Electricity 11 Expired
US6656812B1 Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process Electricity 7 Expired
US9711550B2 Pinned photodiode with a low dark current Emerging Cross-Sectional Technologies 7 Active
US6238941A Characterizing of silicon-germanium areas on silicon Physics 6 Expired
US6744080B2 Method of manufacturing a bipolar transistor of double-polysilicon, heterojunction-base type and corresponding transistor Electricity 6 Expired
US4678538A Process for the production of an insulating support on an oriented monocrystalline silicon film with localized defects Chemistry; Metallurgy 6 Expired
US7776745B2 Method for etching silicon-germanium in the presence of silicon Electricity 4 Active
US6873088B2 Vibratory beam electromechanical resonator Electricity 4 Expired
US6642096B2 Bipolar transistor manufacturing Electricity 3 Expired
US9759546B2 Method for measuring thickness variations in a layer of a multilayer semiconductor structure Electricity 3 Active
US4813781A Method of measuring the flowing of a material Physics 3 Expired
US6162706A Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic Chemistry; Metallurgy 3 Expired
US6642108B2 Fabrication processes for semiconductor non-volatile memory device Electricity 2 Expired
US8158495B2 Process for forming a silicon-based single-crystal portion Electricity 2 Active
US9929039B2 Method for manufacture of a semiconductor wafer suitable for the manufacture of an SOI substrate, and SOI substrate wafer thus obtained Electricity 2 Active
US8975154B2 Process for producing at least one deep trench isolation Electricity 2 Active
US7892927B2 Transistor with a channel comprising germanium Electricity 1 Active
US7776679B2 Method for forming silicon wells of different crystallographic orientations Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.