Anti-fuse memory and semiconductor storage device
US10263002B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2015 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Oct 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5252
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In an anti-fuse memory includes a rectifier element of a semiconductor junction structure in which a voltage applied from a memory gate electrode to a word line is applied as a reverse bias in accordance with voltage values of the memory gate electrode and the word line, and does not use a conventional control circuit. Hence, the rectifier element blocks application of a voltage from the memory gate electrode to the word line. Therefore a conventional switch transistor that selectively applies a voltage to a memory capacitor and a conventional switch control circuit allowing the switch transistor to turn on or off are not necessary. Miniaturization of the anti-fuse memory and a semiconductor memory device are achieved correspondingly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.