Semiconductor device and manufacturing method thereof
US10263010B2 · kind B2 · utility
4Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2018 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Jan 9, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first semiconductor layer, a second semiconductor layer spaced apart from the first semiconductor layer and disposed on the first semiconductor layer, a gate stack structure disposed on the second semiconductor layer, a third semiconductor layer positioned between the first and second semiconductor layers, and a channel pillar passing through the gate stack structure, the second semiconductor layer and the third semiconductor layer and extending into the first semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.